Power Schottky Rectifier
INCHANGE Semiconductor
STPS20120CT
FEATURES ·Low Power Loss,high Efficiency ·High Surge Capab...
Power
Schottky Rectifier
INCHANGE Semiconductor
STPS20120CT
FEATURES ·Low Power Loss,high Efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM Peak Repetitive Reverse Voltage
120
V
IF(RMS) RMS Forward current
30
A
IF(AV)
Average Forward Current
per diode per device
10 20
A
IFSM
Nonrepetitive Peak Surge Current tp=10 ms sinusoidal
150
A
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175 ℃
THERMAL CHARACTERISTICS
SYMB OL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.8
UNI T
℃/W
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Power
Schottky Rectifier
INCHANGE Semiconductor
STPS20120CT
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
VF
Instantaneous Forward Voltage
IR
Instantaneous Reverse Current
IF= 2.5A ; Tc= 25℃ IF= 2.5A ; Tc=125℃ IF= 10A ; Tc= 25℃ IF= 10A ; Tc=125℃ IF= 20A ; Tc= 25℃ IF= 20A ; Tc=125℃ VR= VRRM;Tc= 25℃ VR= VRRM;Tc= 125℃
MAX 0.7 0.58 0.92 0.74 1.02 0.86 0.01 5
UNIT V mA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a gui...
