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STPS20120CR

STMicroelectronics

power Schottky rectifier

$ $ . . . $ $ . 72$%QDUURZOHDGV . ,ð3$. $ $. $ $ . 72$% . . $ $ '3$. $ $ STPS20120C P...


STMicroelectronics

STPS20120CR

File Download Download STPS20120CR Datasheet


Description
$ $ . . . $ $ . 72$%QDUURZOHDGV . ,ð3$. $ $. $ $ . 72$% . . $ $ '3$. $ $ STPS20120C Power Schottky rectifier Datasheet - production data Description This dual diode Schottky rectifier is suited for high frequency switched mode power supplies. Packaged in DPAK, TO-220AB, TO-220AB narrow leads and I²PAK, this device is intended to be used in notebook and LCD adaptors, desktop SMPS, providing in these applications a margin between the remaining voltages applied on the diode and the voltage capability of the diode. Table 1. Device summary Symbol Value IF(AV) VRRM Tj (max) VF (typ) 2 X 10 A 120 V 175 °C 0.70 V Features  High junction temperature capability  Good trade-off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  ECOPACK®2 compliant component for DPAK on demand November 2016 This is information on a product in full production. DocID11212 Rev 4 1/14 www.st.com Characteristics 1 Characteristics STPS20120C Table 2. Absolute ratings (limiting values per diode at Tamb = 25 °C unless otherwise stated) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 120 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current,  = 0.5, square wave Tc = 150 °C per diode 10 A Tc = 145 °C per device 20 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 150 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 330 W Tstg ...




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