IXTP32P05T

isc P-Channel MOSFET Transistor IXTP32P05T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -50 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous -32 IDM Drain Current-Single Pulsed -110 PD Total Dissipation @TC=25℃ 83 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1.5 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor IXTP32P05T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA -50 V VGS(th) Gate Threshold Voltage VDS=VGS; ID= -250μA -2.5 -4.5 V RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -16A 39 mΩ IGSS Gate-Source Leakage Current VGS= ±15V; VDS=0 ±50 nA VDS= VDSS; VGS= 0V IDSS Drain-Source Leakage Current VDS= VDSS; VGS= 0V; TJ=125℃ -3 μA -100 VSD Diode forward voltage IF= -32A; VGS = 0V -1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T...