IXTP86N20T

isc N-Channel MOSFET Transistor IXTP86N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 29mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 86 IDM Drain Current-Single Pulsed 260 PD Total Dissipation @TC=25℃ 300 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.5 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA VGS(th) Gate Threshold Voltage VDS= VGS; ID = 1mA RDS(on) Drain-Source On-Resistance VGS=10V; ID= 43A IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃ IF= 86A; VGS = 0V IXTP86N20T MIN MAX UNIT 200 V 3.0 5.0 V 29 mΩ ±200 nA 1 μA 250 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datashee...