IXTP120N04T2

isc N-Channel MOSFET Transistor IXTP120N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.1mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 360 PD Total Dissipation @TC=25℃ 200 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.75 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTP120N04T2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 40 V VGS(th) Gate Threshold Voltage VDS=VGS; ID = 250μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 25A 6.1 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V ±100 nA IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 150℃ IF= 60A; VGS = 0V 2 μA 50 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datashe...