DatasheetsPDF.com

IXTA96P085T

IXYS

Power MOSFET

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA96P085T IXTP96P085T IXTH96P085T Symbol VDSS VDG...


IXYS

IXTA96P085T

File Download Download IXTA96P085T Datasheet


Description
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA96P085T IXTP96P085T IXTH96P085T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Maximum Ratings - 85 V - 85 V ±15 V ±25 V - 96 A - 300 A - 48 A 1 J 298 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. - 85 V - 2.0 - 4.0 V ±100 nA - 10 μA - 750 μA 13 mΩ VDSS = ID25 = ≤ RDS(on) - 85V - 96A 13mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S TO-247 (IXTH) D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators z Battery Cha...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)