Power MOSFET. IXTP96P085T Datasheet

IXTP96P085T MOSFET. Datasheet pdf. Equivalent


Part IXTP96P085T
Description Power MOSFET
Feature TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA96P085T IXTP96P085T IXTH96P0.
Manufacture IXYS
Datasheet
Download IXTP96P085T Datasheet


TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche IXTP96P085T Datasheet
Recommendation Recommendation Datasheet IXTP96P085T Datasheet




IXTP96P085T
TrenchPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTA96P085T
IXTP96P085T
IXTH96P085T
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
- 85
V
- 85
V
±15
V
±25
V
- 96
A
- 300
A
- 48
A
1
J
298
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS
VGS = ± 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 85
V
- 2.0
- 4.0 V
±100 nA
- 10 μA
- 750 μA
13 mΩ
VDSS =
ID25 =
RDS(on)
- 85V
- 96A
13mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
TO-247 (IXTH)
D (Tab)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS100025B(01/13)



IXTP96P085T
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
TO-247
IXTA96P085T IXTP96P085T
IXTH96P085T
Characteristic Values
Min. Typ. Max.
TO-247 Outline
40
66
S
13.1
nF
1175
pF
460
pF
23
ns
34
ns
45
ns
22
ns
180
52
62
0.50
0.21
nC
nC
nC
0.42 °C/W
°C/W
°C/W
Pins: 1 - Gate
2 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = - 48A, VGS = 0V, Note 1
trr
QRM
IRM
IF = - 48A, -di/dt = -100A/μs
VR = - 43V, VGS = 0V
Characteristic Values
Min. Typ. Max.
- 96 A
- 394 A
-1.3 V
55
ns
100
nC
- 3.6
A
TO-220 Outline
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
TO-263 Outline
1. Gate
2. Drain
3. Source
4. Drain
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06 4.83
0.51 0.99
1.14 1.40
0.40 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160 .190
.020 .039
.045 .055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .005
Pins: 1 - Gate
3 - Source
2 - Drain
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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