TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTA96P085T IXTP96P085T IXTH96P085T
Symbol
VDSS VDG...
TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTA96P085T IXTP96P085T IXTH96P085T
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247
Maximum Ratings
- 85
V
- 85
V
±15
V
±25
V
- 96
A
- 300
A
- 48
A
1
J
298
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS
VGS = ± 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
- 85
V
- 2.0
- 4.0 V
±100 nA
- 10 μA - 750 μA
13 mΩ
VDSS =
ID25 = ≤ RDS(on)
- 85V - 96A
13mΩ
TO-263 AA (IXTA)
G S D (Tab)
TO-220AB (IXTP)
GD S TO-247 (IXTH)
D (Tab)
G DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current
Regulators z Battery Cha...