Single Fast Recovery Epitaxial Diode
MUR60120
®
MUR60120
Pb
Pb Free Plating Product
60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
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Description
MUR60120
®
MUR60120
Pb
Pb Free Plating Product
60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS
TO-247-2L
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current
Internal Configuration Base Backside
Anode Cathode
GENERAL DESCRIPTION
MUR60120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
1200
V
V RRM
Maximum Repetitive Reverse Voltage
1200
V
I F(AV)
Average Forward Current
TC=110°C
60
A
IF(RMS) RMS Forward Current
TC=110°C
84
A
I FSM
Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine
500
A
PD
Power Dissipation
312
W
TJ
Junction Temperature
-40 to +150
°C
T STG
Storage Temperature Range
-40 to +150
°C
Torque Module-to-Sink
Recommended(M3)
1.1
N·m
R θJC
Thermal Resistance
Weight
ELECTRICAL CHARACTERISTICS
Junction-to-Case
0.4
°C /W
6.0
g
TC=25°C unless otherwise specified
Symbol
Parameter
I RM
Reverse Leakage Current
Test Conditions VR=1200V VR=1200V, TJ=125°C
Min. Typ. Max. Unit
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