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MUR60120

Thinki Semiconductor

Single Fast Recovery Epitaxial Diode

MUR60120 ® MUR60120 Pb Pb Free Plating Product 60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode ...


Thinki Semiconductor

MUR60120

File Download Download MUR60120 Datasheet


Description
MUR60120 ® MUR60120 Pb Pb Free Plating Product 60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS TO-247-2L Cathode(Bottom Side Metal Heatsink) PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current Internal Configuration Base Backside Anode Cathode GENERAL DESCRIPTION MUR60120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 1200 V V RRM Maximum Repetitive Reverse Voltage 1200 V I F(AV) Average Forward Current TC=110°C 60 A IF(RMS) RMS Forward Current TC=110°C 84 A I FSM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine 500 A PD Power Dissipation 312 W TJ Junction Temperature -40 to +150 °C T STG Storage Temperature Range -40 to +150 °C Torque Module-to-Sink Recommended(M3) 1.1 N·m R θJC Thermal Resistance Weight ELECTRICAL CHARACTERISTICS Junction-to-Case 0.4 °C /W 6.0 g TC=25°C unless otherwise specified Symbol Parameter I RM Reverse Leakage Current Test Conditions VR=1200V VR=1200V, TJ=125°C Min. Typ. Max. Unit -- ...




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