Hyperfast Diode
30 A, 1200 V
RHRG30120
Description The RHRG30120 is a hyperfast diode with soft recovery
characteristic...
Hyperfast Diode
30 A, 1200 V
RHRG30120
Description The RHRG30120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching
transistors.
Features
Hyperfast Recovery trr = 85 ns (@ IF = 30 A) Max Forward Voltage, VF = 3.2 V (@ TC = 25°C) 1200 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is Pb−Free and is RoHS Compliant
Applications
Switching Power Supplies Power Switching Circuits General Purpose
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 80°C)
Repetitive Peak Surge Current (Square Wave, 20 kHz)
VRRM
1200
V
VRWM
1200
V
VR
1200
V
IF(AV)
30
A
IFRM
60
A
Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz)
IFSM
300
A
Maximum Power Dissipation
Avalanche Energy (See Figures 7 and 8)
PD EAVL
125
W
30
mJ
Operating and Storage Temperature
TSTG, TJ −65 to 175 °C
Stresses exceeding those listed in the Ma...