IXTQ24N55Q

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 270mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 550 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 24 A IDM Drain Current-Single Plused 96 A PD Total Dissipation @TC=25℃ 400 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.31 UNIT ℃/W IXTQ24N55Q isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTQ24N55Q ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 550 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250uA 2.5 4.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 12A 270 mΩ IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Diode Forward On-voltage VGS= ±30V;VDS= 0 VDS=550V; VGS= 0 VDS=550V; VGS= 0;TJ=125℃ IF= 24A ;VGS= 0 ±100 nA 25 1000 µA 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datashe...