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IXTQ30N50L2
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage
Regulator
s ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET...
INCHANGE
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