IXTQ88N28T

Trench Gate Power MOSFET IXTQ88N28T N-Channel Enhancement Mode For Plasma Display Applications VDSS = ID25 = ≤ RDS(on) 280V 88A 44mΩ Symbol VDSS VDGR VGSM ID25 IDRMS IDM PD TJ TJM Tstg T L TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Mounting torque Maximum Ratings 280 V 280 V TO-3P (IXTQ) ±30 V 88 A G 75 A DS 250 A (TAB) 625 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g G = Gate S = Source D = Drain TAB = Drain Features z Trench gate construction for low R DS(on) z International standard package z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID =1mA Characteristic Values Min. Typ. Max. 280 V VGS(th) VDS = VGS, ID = 1mA 3.0 5.0 V IGSS VGS = ±20 V, VDS = 0V ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125°C 1 μA 200 μA RDS(on) VGS = 10 V, ID = 0.5 ID25, Note1 38 44 mΩ © 2008 IXYS All rights reserved DS99353B(01/08) IXTQ88N28T Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. VDS= 10 V, ID = 0.5 ID25, Note 1 40 66 S VGS = 0 V, ...