Power MOSFET. IXTQ200N06P Datasheet

IXTQ200N06P MOSFET. Datasheet pdf. Equivalent


Part IXTQ200N06P
Description Power MOSFET
Feature PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 200N06P V DSS ID25 RDS(on) .
Manufacture IXYS
Datasheet
Download IXTQ200N06P Datasheet


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IXTQ200N06P
PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTQ 200N06P
V
DSS
ID25
RDS(on)
= 60
= 200
6.0
V
A
m
Symbol
Test Conditions
Maximum Ratings TO-3P (IXTQ)
VDSS
VDGR
VGS
V
GSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
T
SOLD
Md
Weight
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 M
Transient
Continuous
TC = 25° C
External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150° C, RG = 4
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P)
TO-3P
60
V
60
V
±30
V
±20
V
200
A
75
A
400
A
60
A
80
mJ
4.0
J
10
V/ns
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
714
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
Features
l International standard package
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
60
V
V
GS(th)
V
DS
=
V,
GS
I
D
=
250µA
2.5
5.0 V
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 60A
V = 15 V, I = 400A
GS
D
Pulse test, t 300 µs, duty cycle d 2 %
6.0 m
5.0
m
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99273E(12/05)



IXTQ200N06P
IXTQ 200N06P
Symbol
g
fs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
R
thJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
V = 10 V; I = 60A, pulse test
DS
D
45 65
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
5400
pF
3550
pF
1360
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 3.3 (External)
35
ns
60
ns
90
ns
40
ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
200
nC
37
nC
110
nC
0.21° C/W
0.21
° C/W
TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0 V
ISM
Repetitive
VSD
IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d2 %
200 A
400 A
1.5 V
trr
IF = 25 A, -di/dt = 100 A/µs
QRM
VR = 30 V, VGS = 0 V
90
ns
1.0
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2







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