Power MOSFET. IRFIB7N50L Datasheet

IRFIB7N50L MOSFET. Datasheet pdf. Equivalent


Part IRFIB7N50L
Description Power MOSFET
Feature PD - 95888 SMPS MOSFET IRFIB7N50L Applications • Zero Voltage Switching SMPS • Telecom and Server .
Manufacture International Rectifier
Datasheet
Download IRFIB7N50L Datasheet


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IRFIB7N50L
PD - 95888
SMPS MOSFET IRFIB7N50L
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
500V 320m85ns 6.8A
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise
immunity.
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
™ Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
6.8
4.3
27
46
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.37
±30
24
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
x x 300 (1.6mm from case )
10lb in (1.1N m)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 6.8
MOSFET symbol
D
(Body Diode)
A showing the
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
––– ––– 27
––– ––– 1.5
integral reverse
G
f p-n junction diode.
S
V TJ = 25°C, IS = 6.8A, VGS = 0V
trr
Reverse Recovery Time
f ––– 85 130 ns TJ = 25°C, IF = 6.8A
––– 130 200
TJ = 125°C, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
–––
–––
280
570
420
860
f nC TJ = 25°C, IS = 6.8A, VGS = 0V
f TJ = 125°C, di/dt = 100A/µs
IRRM
Reverse Recovery Current
––– 5.9 8.9 A TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFIB7N50L
IRFIB7N50L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
IGSS
RG
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
500
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
0.44
0.32
–––
–––
–––
–––
–––
0.88
Max.
–––
–––
0.38
5.0
50
2.0
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
f V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.1A
V VDS = VGS, ID = 250µA
µA VDS = 500V, VGS = 0V
mA VDS = 400V, VGS = 0V, TJ = 125°C
nA VGS = 30V
VGS = -30V
f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Coss eff. (ER)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
4.7 ––– –––
––– ––– 92
––– ––– 24
––– ––– 44
––– 23 –––
––– 36 –––
––– 47 –––
––– 19 –––
––– 2220 –––
––– 230 –––
––– 23 –––
––– 2780 –––
––– 63 –––
––– 140 –––
––– 100 –––
S VDS = 50V, ID = 4.1A
ID = 6.8A
f nC VDS = 400V
VGS = 10V, See Fig. 7 & 16
VDD = 250V
ns ID = 6.8A
f RG = 9.0
VGS = 10V, See Fig. 11a & 11b
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
pF VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
g VGS = 0V,VDS = 0V to 400V
(Energy Related)
Avalanche Characteristics
Symbol
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
550
6.8
4.6
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.69
65
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 12).
‚ Starting TJ = 25°C, L = 24mH, RG = 25,
IAS = 6.8A, (See Figure 14).
ƒ ISD 6.8, di/dt 650A/µs, VDD V(BR)DSS,
dv/dt = 24V/ns, TJ 150°C.
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from 0 to 80% VDSS.
2
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