Power MOSFET. IXTU05N100 Datasheet

IXTU05N100 MOSFET. Datasheet pdf. Equivalent


Part IXTU05N100
Description Power MOSFET
Feature High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = .
Manufacture IXYS
Datasheet
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isc N-Channel MOSFET Transistor IXTU05N100 ·FEATURES ·Stat IXTU05N100 Datasheet
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanc IXTU05N100 Datasheet
Recommendation Recommendation Datasheet IXTU05N100 Datasheet




IXTU05N100
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTU05N100
IXTY05N100
VDSS =
ID25 =
RDS(on)
1000V
750mA
17
TO-251
(IXTU)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting force
TO-251
TO-252
Maximum Ratings
1000
V
1000
V
30
V
40
V
750
mA
3
A
1
A
100
mJ
3
V/ns
40
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
0.40
g
0.35
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250A
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 375mA, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
2.5
4.5 V
100 nA
25 A
500 A
17
G
D
S
TO-252
(IXTY)
G
S
D (TAB)
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International Standard Packages
Fast Switching Times
Avalanche Rated
Rds(on) HDMOSTM Process
Rugged Polysilicon Gate Cell structure
Extended FBSOA
Advantages
High Power Density
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Flyback Inverters
DC Choppers
© 2017 IXYS CORPORATION, All Rights Reserved
DS100102B(9/17)



IXTU05N100
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 500mA, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RG = 47(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RthJC
Characteristic Values
Min. Typ. Max.
0.55
0.93
S
260
pF
22
pF
8
pF
11
ns
19
ns
40
ns
28
ns
7.8
nC
1.4
nC
4.1
nC
3.1C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = IS, -di/dt = 100A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
750 mA
3A
1.5 V
710
ns
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IXTU05N100
IXTY05N100
TO-251Outline
1. Gate
2.Drain
3. Source 4. Drain
Dim.
A
A1
b
b1
b2
c
c1
D
E
e
e1
H
L
L1
L2
Millimeter
Min. Max.
2.19 2.38
0.89 1.14
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
6.35 6.73
2.28 BSC
4.57 BSC
17.02 17.78
8.89 9.65
1.91 2.28
0.89 1.27
Inches
Min. Max.
.086 .094
0.35 .045
.025 .035
.030 .045
.205 .215
.018 .023
.018 .023
.235 .245
.250 .265
.090 BSC
.180 BSC
.670 .700
.350 .380
.075 .090
.035 .050
TO-252 AA Outline
E
A
b3
L3
c2
4
L4 1 2 3
L1
b2
e
ee11
OPTIONAL
A1
H
A2
L
L2
c
0
5.55MIN
1 - Gate
2,4 - Drain
3 - Source
4
6.40
6.50MIN
BOTTOM
VIEW
2.85MIN
2.28
1.25MIN
LAND PATTERN RECOMMENDATION
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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