Power MOSFET. IXTY12N06T Datasheet

IXTY12N06T MOSFET. Datasheet pdf. Equivalent


Part IXTY12N06T
Description Power MOSFET
Feature Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rate.
Manufacture IXYS
Datasheet
Download IXTY12N06T Datasheet


Preliminary Technical Information TrenchMVTM Power MOSFET N IXTY12N06T Datasheet
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Recommendation Recommendation Datasheet IXTY12N06T Datasheet




IXTY12N06T
Preliminary Technical Information
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTU12N06T
IXTY12N06T
VDSS =
ID25 =
RDS(on)
60V
12A
85mΩ
TO-251 (IXTU)
Symbol
VDSS
VDGR
VGSM
ID25
IDM
ILRMS
IAR
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
Package Current Limit, RMS TO-252
TC = 25°C
TC = 25°C
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Mounting torque
TO-251
TO-252
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 25μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Maximum Ratings
60
V
60
V
±20
V
12
A
30
A
25
A
3
A
20
mJ
33
-55 ... +175
175
-55 ... +175
300
260
1.13/10
0.40
0.35
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Characteristic Values
Min. Typ. Max.
60
V
2.0
4.0 V
± 50 nA
1 μA
100 μA
85 mΩ
G
D
S
D (TAB)
TO-252 (IXTY)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Ultra-low On Resistance
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z 175 °C Operating Temperature
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
z DC/DC Converters and Off-line UPS
z Primary Switch for 24V and 48V
Systems
z High Current Switching
Applications
2008 IXYS CORPORATION All rights reserved
DS99947(4/08)



IXTY12N06T
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Notes 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 VDSS, ID = 6A
RG = 50Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 6A
RthJC
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
VSD
IF = 6A, VGS = 0V, Note 1
trr
IF = 6A, VGS = 0V, -di/dt = 100A/μs
IRM
VR = 30V
Characteristic Values
Min. Typ. Max.
2.9
4.7
S
256
pF
46
pF
10.4
pF
12
ns
29
ns
29
ns
18
ns
3.4
nC
1.0
nC
0.9
nC
4.5 °C/W
Characteristic Values
Min.
Typ.
30
1.34
Max.
12 A
48 A
1.2 V
ns
A
IXTU12N06T
IXTY12N06T
TO-251 (IXTU) Outline
1. Gate
2.Drain
3. Source 4. Drain
Dim.
A
A1
b
b1
b2
c
c1
D
E
e
e1
H
L
L1
L2
Millimeter
Min. Max.
2.19 2.38
0.89 1.14
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
6.35 6.73
2.28 BSC
4.57 BSC
17.02 17.78
8.89 9.65
1.91 2.28
0.89 1.27
Inches
Min. Max.
.086 .094
0.35 .045
.025 .035
.030 .045
.205 .215
.018 .023
.018 .023
.235 .245
.250 .265
.090 BSC
.180 BSC
.670 .700
.350 .380
.075 .090
.035 .050
TO-252 (IXTY) Outline
Notes: 1. Pulse test: t 300μs; duty cycle, d 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be
5mm or less from the package body.
Pins: 1 - Gate
3 - Source
2,4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Inches
Min. Max.
0.086 0.094
0.035 0.045
0 0.005
0.025 0.035
0.030 0.045
0.205 0.215
0.018 0.023
0.018 0.023
0.235 0.245
0.170 0.205
0.250 0.265
0.170 0.205
0.090 BSC
0.180 BSC
0.370 0.410
0.020 0.040
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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