N-Channel MOSFET. IXTY2R4N50P Datasheet

IXTY2R4N50P MOSFET. Datasheet pdf. Equivalent


Part IXTY2R4N50P
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor IXTY2R4N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) .
Manufacture INCHANGE
Datasheet
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IXTY2R4N50P
isc N-Channel MOSFET Transistor
IXTY2R4N50P
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤ 3.75@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converter
·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
Drain Current-Single Pulsed
PD
Total Dissipation @TC=25
Tj
Operating Junction Temperature
Tstg
Storage Temperature
500
V
±30
V
2.4
A
4.5
A
55
W
-55~150
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Junction-to-case thermal resistance
MAX
2.27
UNIT
/W
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IXTY2R4N50P
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 1.2A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V
VDS= VDSS; VGS= 0V;TJ= 125
IF= 2.4A; VGS = 0V
IXTY2R4N50P
MIN MAX UNIT
500
V
3.0
5.5
V
3.75
Ω
±50
nA
1
μA
50
1.5
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
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