Bus-Termination Array. SN74F1016 Datasheet

SN74F1016 Array. Datasheet pdf. Equivalent


Part SN74F1016
Description 16-Bit Schottky Barrier Diode RC Bus-Termination Array
Feature • Designed to Reduce Reflection Noise • Repetitive Peak Forward Current . . . 300 mA • 16-Bit Array .
Manufacture etcTI
Datasheet
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• Designed to Reduce Reflection Noise • Repetitive Peak Forw SN74F1016 Datasheet
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SN74F1016
Designed to Reduce Reflection Noise
Repetitive Peak Forward
Current . . . 300 mA
16-Bit Array Structure Suited for
Bus-Oriented Systems
description
This bus-termination array is designed to reduce
reflection noise and minimize ringing on
high-performance bus lines. The SN74F1016
features a 16-bit R-C network and Schottky barrier
diode array. These Schottky diodes provide
clamp-to-ground functionality and serve to
minimize overshoot and undershoot of
high-speed switching buses.
The SN74F1016 is characterized for operation
from 0°C to 70°C.
schematic diagram
GND A16
20
19
A15
18
A14
17
A13
16
A12
15
SN74F1016
16ĆBIT SCHOTTKY BARRIER DIODE
RĆC BUSĆTERMINATION ARRAY
SDFS093 − NOVEMBER 1992 − REVISED DECEMBER 1993
DW PACKAGE
(TOP VIEW)
GND 1
A1 2
A2 3
A3 4
A4 5
A5 6
A6 7
A7 8
A8 9
GND 10
20 GND
19 A16
18 A15
17 A14
16 A13
15 A12
14 A11
13 A10
12 A9
11 GND
A11
14
A10
13
A9
12
GND
11
1
2
3
4
5
6
7
8
9
10
GND A1
A2
A3
A4
A5
A6
A7
A8 GND
Resistor = 50 Ω ± 10%
Capacitor = 47 pF ± 10%, VR = 2.5 V, f = 1 MHz
Diode = Schottky
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1993, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
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SN74F1016
SN74F1016
16ĆBIT SCHOTTKY BARRIER DIODE
RĆC BUSĆTERMINATION ARRAY
SDFS093 − NOVEMBER 1992 − REVISED DECEMBER 1993
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Steady-state reverse voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Continuous forward current, IF: Any D terminal from GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Total through all GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 mA
Repetitive peak forward current, IFRM‡: Any D terminal from GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
Total through all GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 A
Continuous total power dissipation at (or below) 25°C free-air temperature . . . . . . . . . . . . . . . . . . . . 500 mW
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
These values apply for tw 100 µs, duty cycle 20%.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
single-diode operation (see Note 1)
PARAMETER
TEST CONDITIONS
MIN TYP† MAX UNIT
IR
Static reverse current
VR = 7 V
2 µA
VFM Peak forward voltage
IF = 200 mA
1.25
V
VR = 0
80
Ct
Total capacitance
VR = 2 V
60 pF
VR = 3 V
55
All typical values are at TA = 25°C.
NOTE 1: Test conditions and limits apply separately to each of the diodes. The diodes not under test are open-circuited during the measurement
of these characteristics.
multiple-diode operation
PARAMETER
TEST CONDITIONS
Ix Internal crosstalk current
Total GND current = 1.2 A,
See Note 2
NOTE 2: Ix is measured under the following conditions with one diode static, all others switching:
Switching diodes: tw = 100 µs, duty cycle = 20%;
Static diode: VR = 5 V; the static diode input current is the internal crosstalk current Ix.
MIN TYP† MAX UNIT
10
50 µA
switching characteristics, TA = 25°C
PARAMETER
TEST CONDITIONS
trr Reverse recovery time IF = 10 mA, IRM(REC) = 10 mA, IR(REC) = 1 mA, RL = 100
MIN TYP† MAX UNIT
8 10 ns
undershoot characteristics
PARAMETER
VUS Undershoot voltage
TEST CONDITIONS
tf = 2 ns, tw = 50 ns, VIH = 5 V, VIL = 0, ZS = 25 , ZO = 50 ,
L = 36-inch coaxial cable
MIN TYP† MAX UNIT
0.7 0.8 V
2−2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443







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