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SPA16N50C3 Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part SPA16N50C3
Description N-Channel MOSFET
Feature Isc N-Channel MOSFET Transistor INCHANG E Semiconductor SPA16N50C3 ·FEATURES ·Drain-source on-resistance: RDS(on) 250mΩ@10V ·Reduced switching and conduction losses ·100% avalanche test ed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching a pplications ·ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE U NIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±20 V I D Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 16 10 A IDM Drain Current-Single Pulsed 48 A PD Total Dissipation @TC=25℃ 34 .
Manufacture INCHANGE
Datasheet
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Part SPA16N50C3
Description N-Channel MOSFET
Feature Isc N-Channel MOSFET Transistor INCHANG E Semiconductor SPA16N50C3 ·FEATURES ·Drain-source on-resistance: RDS(on) 250mΩ@10V ·Reduced switching and conduction losses ·100% avalanche test ed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching a pplications ·ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE U NIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±20 V I D Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 16 10 A IDM Drain Current-Single Pulsed 48 A PD Total Dissipation @TC=25℃ 34 .
Manufacture INCHANGE
Datasheet
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SPA16N50C3

SPA16N50C3
SPA16N50C3

SPA16N50C3

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