BAR 18
®
BAS70-04 06
SMALL SIGNAL SCHOTTKY DIODES
K
N.C. A
BAR18
A1 K2
K1
A2
BAS70-04
DESCRIPTION
Low turn-on and ...
BAR 18
®
BAS70-04 06
SMALL SIGNAL
SCHOTTKY DIODES
K
N.C. A
BAR18
A1 K2
K1
A2
BAS70-04
DESCRIPTION
Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in hybrid micro circuits.
K
A
A1
A2
BAS70-05
SOT-23 (Plastic)
K1
K2
BAS70-06
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
VRRM IF Ptot Tstg Tj
Repetitive peak reverse voltage
Continuous forward current
Power dissipation (note 1)
Tamb = 25°C
Maximum storage temperature range
Maximum operating junction temperature *
70 70 250 - 65 to +150 150
TL Maximum temperature for soldering during 10s
260
Note 1: for double diodes, Ptot is the total dissipation of both diodes
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj
Rth(j − a)
Unit
V mA mW °C °C °C
THERMAL RESISTANCE
Symbol
Parameter
Rth (j-a) Junction to ambient (*)
(*) Mounted on epoxy board with recommended pad layout.
Value
500
Unit
°C/W
December 2001 - Ed: 3A
1/4
BAR 18 / BAS70-04 06
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
VBR
Tj = 25°C IR = 10µA
VF *
Tj = 25°C IF = 1mA
IR **
Tj = 25°C VR = 50V
Pulse test: * tp = 380µs, δ < 2% ** tp = 5 ms, δ < 2%
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
C
Tj = 25°C VR = 0V F = 1MHz
τ*
Tj = 25°C IF = 5mA Krakauer Method
* Effective carrier life time.
Min.
70
Typ.
Max.
410 200
Unit
V mV nA
Min.
Typ.
Max.
2 100
Unit
pF ps
Fig. 1-1: Forward voltage drop versus...
