SPB16N50C3

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 16 PD Total Dissipation @TC=25℃ 160 Tj Max. Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A W ℃ ℃ SPB16N50C3 ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance isc website：www.iscsemi.cn MAX 0.78 UNIT ℃/W 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250uA VGS(th) Gate Threshold Voltage VDS=VGS; ID= 675uA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 10A IGSS Gate-Source Leakage Current VGS= ±20V; VDS= 0V IDSS Drain-Source Leakage Current VDS= 500V; VGS= 0V VSD Diode forward voltage IS= 16A, VGS = 0V SPB16N50C3 MIN TYP MAX UNIT 500 V 2.1 3 3.9 V 250 280 mΩ ±100 nA 0.1 1 μA 1 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information con...