Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resista...
Isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
21
PD
Total Dissipation @TC=25℃
34.5
Tj
Max. Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A W ℃ ℃
SPB21N50C3
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
isc website:www.iscsemi.cn
MAX 0.6
UNIT ℃/W
1 isc & iscsemi is registered trademark
Isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= 1mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 13.1A
IGSS
Gate-Source Leakage Current
VGS= ±20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 500V; VGS= 0V
VSD
Diode forward voltage
IS= 21A, VGS = 0V
SPB21N50C3
MIN TYP MAX UNIT
500
V
2.1
3
3.9
V
160 190 mΩ
±100 nA
0.1
1
μA
1
1.2
V
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information con...