SPB80P06PG

SPB80P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A · 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPB80P06P G Package Lead free PG-TO263-3 Yes Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID TC = 25 °C, 1) TC = 100 °C Pulsed drain current TC = 25 °C ID puls Avalanche energy, single pulse W ID = -80 A , VDD = -25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAS EAR dv/dt IS = -80 A, VDS = -48 , di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj , Tstg Value -80 -64 -320 823 34 6 ±20 340 -55...+175 55/175/56 1Current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry ID = -91A Rev 1.6 Page 1 Unit A mJ kV/µs V W °C 2011-09-01 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) SPB80P06P G Symbol Values Unit min. typ. max. RthJC RthJA RthJA - - 0.4 K/W - -...