SPD15P10PL

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤270mΩ(@VGS= -4.5V; ID= -9.7A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -15 A PD Total Dissipation @TC=25℃ 128 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 1.17 ℃/W SPD15P10PL isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250uA VGS(th) Gate Threshold Voltage VDS=VGS; ID= -1.54mA RDS(on) Drain-Source On-Resistance VGS= -4.5V; ID= -9.7A IGSS Gate-Source Leakage Current VGS= ±20V; VDS= 0V IDSS Drain-Source Leakage Current VDS= -100V; VGS= 0V VSD Diode forward voltage IS= -15A, VGS = 0V SPD15P10PL MIN MAX UNIT -100 V -1 -2 V 270 mΩ ±100 nA -1 μA -1.35 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is pr...