SPI15N65C3

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 65 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pulsed 45 A PD Total Dissipation @TC=25℃ 156 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.8 ℃/W SPI15N65C3 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.675mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=9.4A IGSS Gate-Source Leakage Current VGS=±20V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=15A; VGS = 0V SPI15N65C3 MIN TYP MAX UNIT 650 V 2.1 3.9 V 0.28 Ω ±0.1 μA 25 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any ...