SPI16N50C3

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤280mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·New revolutionary high voltage technology ·Ultra low effective capacitance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 16 IDM Drain Current-Single Pulsed 48 PD Total Dissipation @TC=25℃ 160 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.78 ℃/W SPI16N50C3 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID =675μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=10A IGSS Gate-Source Leakage Current VGS=20V;VDS=0V IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V VSD Diode forward voltage IF=IS; VGS = 0V SPI16N50C3 MIN TYP MAX UNIT 500 V 2.1 3.9 V 280 mΩ 0.1 μA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T...