isc N-Channel MOSFET Transistor
SPP80N06S2-09
·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDS...
isc N-Channel MOSFET
Transistor
SPP80N06S2-09
·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
80
A
ID(puls)
Pulse Drain Current
320
A
Ptot
Total Dissipation@TC=25℃
190
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.79 ℃/W
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isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS= 80A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 50A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 80V; VGS= 0
SPP80N06S2-09
MIN TYPE MAX UNIT
60
V
2.1
4.0
V
1.3
V
9.1 mΩ
±100 nA
5
µA
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