STB12NM50-1

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±30 V 12 A 48 A 160 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.78 UNIT ℃/W STB12NM50-1 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STB12NM50-1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 6A IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VGS= ±30V;VDS= 0 VDS= 500V; VGS= 0 VDS= 500V; VGS= 0; Tj= 125℃ IS= 12A; VGS=0 MIN MAX UNIT 500 V 3 5 V 350 mΩ ±100 nA 1 10 μA 1.5 V NOTICE： ISC reserves the rights to make c...