STB18NM60N

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 13 A IDM Pulse Drain Current 52 A Ptot Total Dissipation@TC=25℃ 110 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.14 ℃/W STB18NM60N isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor STB18NM60N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 6.5A 285 mΩ IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= Max rating VDS= Max rating; TC=125℃ 1 µA 10 VSD Diode Forward On-Voltage IS= 13A ;VGS= 0 1.6 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The...