STF28NM60ND

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data TAB 2 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram 'Ć7$% * Features Order codes VDS @ TJ max. RDS(on) max ID STB28NM60ND STF28NM60ND 650 V STP28NM60ND 0.150 Ω 23 A STW28NM60ND Intrinsic fast-recovery body diode 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Applications Switching applications Description These FDmesh™ II Power MOSFETs with 6 intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ $0Y technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Order codes STB28NM60ND STF28NM60ND STP28NM60ND STW28NM60ND Table 1. Device summary Marking Packages 2 D PAK 28NM60ND TO-220FP TO-220 TO-247 Packaging Tape and reel Tube May 2014 This is information on a product in full production. DocID024520 Rev 3 1/22 www.st.com 22 Contents Contents STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....