Isc N-Channel MOSFET Transistor
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate ...
Isc N-Channel MOSFET
Transistor
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-ContinuousTc=25℃
80
A
IDM
Drain Current-Single Pulsed
320
A
PD
Total Dissipation @TC=25℃
160
W
Tch
Max. Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-case Thermal resistance junction-case
MAX 0.94
UNIT ℃/W
STB130N6F7-2
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
Isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1.0mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=40A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=60V; VGS= 0V;
VSDF
Diode forward voltage
ISD= 80A, VGS = 0 V
STB130N6F7-2
MIN TYP MAX UNIT
60
V
2.0
4.0
V
5
mΩ
±0.1 μA
1
μA
1.2
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information conta...
