isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static drain-source on-resistance
:...
isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static drain-source on-resistance
: RDS(on) ≤ 2Ω@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
4
IDM
Drain Current-Single Pulsed
16
PD
Total Dissipation @TC=25℃
70
Tj
Max. Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
MAX 1.79
UNIT ℃/W
STD4NK60ZT4
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isc N-Channel MOSFET
Transistor
STD4NK60ZT4
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
600
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=50μA
3
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=2A
2
Ω
IGSS
Gate-Source Leakage Current
VGS= ±20V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V VDS=600V; VGS= 0V;TC=125℃
VSD
Diode forward voltage
ISD= 4A, VGS = 0V
±10 uA
1 50
μA
1.6
V
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