N-Channel MOSFET
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET
FQB8N60C / FQI8N60C
N-Channel QFET® MOSFET
600 V, 7.5 A, 1.2 Ω
Descripti...
Description
FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET
FQB8N60C / FQI8N60C
N-Channel QFET® MOSFET
600 V, 7.5 A, 1.2 Ω
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A
Low Gate Charge (Typ. 28 nC)
Low Crss (Typ. 12 pF)
100% Avalanche Tested
RoHS Compliant
D
D
G S
D2-PAK
GDS
I2-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds.
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
FQB8N60CTM / FQI8N60CTU 600 7.5 4.6 30 ± 30 230 7.5 14.7 4.5 3.13 147 1.18
-55 to +150
300
Unit V A A A V mJ A mJ
V/ns W W
W/...
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