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FDB045AN08A0-F085

ON Semiconductor

N-Channel MOSFET

FDB045AN08A0-F085 N-Channel PowerTrench® MOSFET FDB045AN08A0-F085 N-Channel PowerTrench® MOSFET 75V, 80A, 4.5m: Feature...


ON Semiconductor

FDB045AN08A0-F085

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Description
FDB045AN08A0-F085 N-Channel PowerTrench® MOSFET FDB045AN08A0-F085 N-Channel PowerTrench® MOSFET 75V, 80A, 4.5m: Features rDS(ON) = 3.9m: (Typ.), VGS = 10V, ID = 80A Qg(tot) = 92nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Formerly developmental type 82684 Applications 42V Automotive Load Control Starter / Alternator Systems Electronic Power Steering Systems Electronic Valve Train Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V systems D GATE SOURCE TO-263AB DRAIN (FLANGE) FDB SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 137oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RTJA = 43oC/W) EAS PD TJ, TSTG Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature G S Ratings 75 r20 90 19 Figure 4 600 310 2.0 -55 to 175 Units V V A A A mJ W W/oC oC Thermal Characteristics RTJC RTJA RTJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.48 62 43 oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotiv...




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