isc N-Channel MOSFET Transistor
STD8NM60ND
FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V...
isc N-Channel MOSFET
Transistor
STD8NM60ND
FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
7
A
IDM
Drain Current-Single Pluse
28
A
PD
Total Dissipation @TC=25℃
70
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.79
℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 3.5A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±20V;VDS= 0
VDS= Max rating; VDS= Max rating; Tj= 125℃
IS= 7A; VGS=0
STD8NM60ND
MIN MAX UNIT
600
V
3
5
V
0.7
Ω
±100 nA
1 100
μA
1.3
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time wit...
