Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STD80N10F7
\
·FEATURES ·Extremely low gate charge ·Ultra low on...
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STD80N10F7
\
·FEATURES ·Extremely low gate charge ·Ultra low on-resistance ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous@TC=25℃ TC=100℃
70 48
A
IDM
Drain Current-Single Pulsed
280
A
PD
Total Dissipation
85
W
Tj
Max. Operating Junction Temperature
-55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 1.76
UNIT ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STD80N10F7
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
100
V
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
2.5
4.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=40A
10
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 100V; VGS= 0V；TJ=25℃ TJ=125℃
ISD=80A, VGS = 0 V
±100 μA
1 100
μA
1.1
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at an...
