STF20NM50FD

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 20 A IDM Pulse Drain Current 80 A Ptot Total Dissipation@TC=25℃ 45 W Tj Max. Operating Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.8 ℃/W STF20NM50FD isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor STF20NM50FD ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 3 5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 10A 250 mΩ IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= Max rating VDS= Max rating; TC=125℃ 1 µA 10 VSD Diode Forward On-Voltage IS= 20A ;VGS= 0 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. Th...