GaAs HEMT MMIC LOW-NOISE AMPLIFIER
LOW NOISE AMPLIFIERS - CHIP
v02.0209
1 Typical Applications This HMC-ALH313 is ideal for: • Point-to-Point Radios • Poi...
Description
LOW NOISE AMPLIFIERS - CHIP
v02.0209
1 Typical Applications This HMC-ALH313 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Test Equipment & Sensors Military & Space
Functional Diagram
HMC-ALH313
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz
Features
Noise Figure: 3 dB Gain: 20 dB P1dB Output Power: +12 dBm Supply Voltage: +2.5V @ 52 mA Die Size: 1.80 x 0.73 x 0.1 mm
General Description
The HMC-ALH313 is a three stage GaAs MMIC HEMT Low Noise Amplifier die which operates between 27 and 33 GHz. The amplifier provides 20 dB of gain, a 3 dB noise figure and +12 dBm of output power at 1 dB gain compression while requiring only 52 mA from a +2.5V supply voltage. This amplifier die is ideal for use as a LNA or driver amplifier, and may be easily integrated into Multi-Chip-Modules (MCMs) due to its small size (1.30 mm2) .
Electrical Specifications ,[1] TA = +25° C, Vdd= 2.5V, Idd = 52mA [2]
Parameter
Min.
Typ.
Frequency Range
27 - 33
Gain
18
20
Gain Variation over Temperature
0.03
Noise Figure
3
Input Return Loss
12
Output Return Loss
14
Output Power for 1 dB Compression
10
12
Supply Current
52
[1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.3V) to achieve Iddtotal = 52 mA
Max. 3.5
Units GHz dB dB / °C dB dB dB dBm mA
1 - 150
IrrliniecgfseohpntrsomsenoasftiisibtohingilrirtdyafunpirstnaeairdstsihesbesuyFdmthiomeba2dtyprm0lbiAcpyaanyAAtariorlnioelncapgsluoeoh...
Similar Datasheet