HMC-ALH376

LOW NOISE AMPLIFIERS - CHIP v02.0209 1 Typical Applications This HMC-ALH376 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military & Space Functional Diagram HMC-ALH376 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz Features Noise Figure: 2 dB Gain: 16 dB @ 40 GHz P1dB Output Power: +6 dBm Supply Voltage: +4V @ 87 mA Die Size: 2.7 x 1.44 x 0.1 mm General Description The HMC-ALH376 is a GaAs MMIC HEMT three stages, self-biased Low Noise Amplifier die which operates between 35 and 45 GHz. The amplifier provides 16 dB of gain, a 2 dB noise figure and +6 dBm of output power at 1 dB gain compression while requiring only 87 mA from a single +4V supply. This self-biased LNA is ideal for integration into hybrid assemblies or Multi-Chip-Modules (MCMs) due to its small size (3.9 mm2). Electrical Specifications*, TA = +25° C, Vdd= +4V Parameter Min. Typ. Frequency Range 35 - 40 Gain 15 16 Noise Figure 2 Input Return Loss 10 Output Return Loss 16 Output Power for 1 dB Compression 6 Supply Current (Idd) (Vdd= +4V) 87 *Unless otherwise indicated, all measurements are from probed die Max. 3 Min. Typ. Max. 40 - 45 10 12 2.2 3 17 18 6 87 Units GHz dB dB dB dB dBm mA 1 - 168 IrrliniecgfseohpntrsomsenoasftiisibtohingilrirtdyafunpirstnaeairdstsihesbesuyFdmthiomeba2dtyprm0lbiAcpyaanyAAtariorlnioelncapgsluoeohlDrgt,eofaDrvtodheimcevReericwistloesiissivusaefseodbeur.nrei,dtSlyiseepC,vureesacahdeinf,niyectnoado...