HMC-ALH444

AMPLIFIERS - LOW NOISE - CHIP v04.0417 1 Typical Applications This HMC-ALH444 is ideal for: Wideband Communication Systems Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation * VSAT Functional Diagram HMC-ALH444 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Features Noise Figure: 1.75 dB @ 10 GHz Gain: 17 dB P1dB Output Power: +19 dBm @ 5 GHz Supply Voltage: +5V @ 55 mA Die Size: 2.64 x 1.64 x 0.1 mm General Description The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 and 12 GHz. The amplifier provides 17 dB of gain, 1.5 dB noise figure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage. Electrical Specifications*, TA = +25° C, Vdd= +5V Parameter Min. Frequency Range Gain 15 Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output IP3 Output Power for 1 dB Compression Supply Current (Idd) (Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ) *Unless otherwise indicated, all measurements are from probed die Typ. 1 - 12 17 0.02 1.5 10 14 28 19 55 Max. 2 Units GHz dB dB / °C dB dB dB dBm dBm mA 1-1 InfForomraptiornicfuer,nidsheedlivbeyrAyn, aalongdDteovicpelsaics ebeolierdveedrtso: bAenaacclourgateDaenvdicreelisab,leIn. cHo.,wOevenre, nToechFonrolporgicye,Wdaeyli,vePr.yO, .aBndoxto91p0la6c,eNoordrweros:odAn, aMloAg 0D2e0v6ic2e-s9, 1I0nc6., rrlTiiecrgasehdpnteossmneosf...