isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·1...
isc N-Channel MOSFET
Transistor
·DESCRIPTION ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current-continuous@ TC=25℃
22
A
ID(puls)
Pulse Drain Current
88
A
Ptot
Total Dissipation@TC=25℃
35
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
3.6
℃/W
STF32NM50N
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isc N-Channel MOSFET
Transistor
STF32NM50N
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
500
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
2.0
4.0
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=11A
0.13 Ω
IGSS
Gate-Body Leakage Current
VGS= ±25V;VDS= 0
±100 nA
VDS= 500V; VGS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0;TC=125℃
1 µA
100
VSD
Diode Forward On-Voltage
IS=22A ;VGS= 0
1.6
V
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