isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Stan...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current-Continuous@TC=25℃
27
TC=100℃
17
A
IDM
Drain Current-Single Pulsed
108
A
PD
Total Dissipation
40
W
Tj
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
3.1
℃/W
STF35N65M5
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isc N-Channel MOSFET
Transistor
STF35N65M5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1.0mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
650
V
3.0
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=13.5A
85
98
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±25V;VDS= 0V
VDS= 650V; VGS= 0V;Tc=25℃ Tc=125℃
ISD=27A, VGS = 0 V
±0.1 μA
1 100
μA
1.5
V
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