isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 90A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 80V(Min) ·Stati...
isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID= 90A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 80V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
80
V
±20
V
90
A
360
A
200
W
-55~175 ℃
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.75
UNIT ℃/W
STH130N8F7-2
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
STH130N8F7-2
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 45A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±20V;VDS= 0
VDS= 80V; VGS= 0 VDS= 80V; VGS= 0; Tj= 125℃
IS= 90A; VGS=0
MIN MAX UNIT
80
V
2.5
4.5
V
4
mΩ
±100 nA
1 10
μA
1.2
V
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