isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast ...
isc N-Channel Mosfet
Transistor
·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
11
A
IDM
Pulse Drain Current
44
A
Ptot
Total Dissipation@TC=25℃
160
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.78
℃/W
STP11NM60FD
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isc N-Channel Mosfet
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 5.5A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0 VDS= 600V; TC=125℃
VSD
Diode Forward On-Voltage
IS= 11A ;VGS= 0
STP11NM60FD
MIN TYPE MAX UNIT
600
V
3
5
V
450 mΩ
±100 nA
1 µA
10
1.5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in...
