isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Stat...
isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 290mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID IDM PD TJ Tstg
Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature
600
V
±25
V
13
A
52
A
130
W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.96
UNIT ℃/W
STP18NM60ND
isc website：www.iscsemi.com
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isc N-Channel MOSFET
Transistor
STP18NM60ND
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 6.5A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±20V;VDS= 0
VDS= 600V; VGS= 0 VDS= 600V; VGS= 0; Tj= 125℃
IS= 13A; VGS=0
MIN MAX UNIT
600
V
3
5
V
290
mΩ
±100 nA
1 100
μA
1.6
V
NOTICE： ISC reserves the rights to make changes of th...
