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STP21NM60ND Dataheets PDF



Part Number STP21NM60ND
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet STP21NM60ND DatasheetSTP21NM60ND Datasheet (PDF)

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP21NM60ND ·FEATURES ·With TO-220 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 17 10.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP21NM60ND ·FEATURES ·With TO-220 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 17 10 A IDM Drain Current-Single Pulsed 68 A PD Total Dissipation @TC=25℃ 140 W Tch Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.89 62.5 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP21NM60ND ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 600 V VGS(th) Gate Threshold Voltage VDS= ±25V; ID=0.25mA 3 5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=8.5A 170 220 mΩ IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±25V;VDS= 0V Drain-Source Leakage Current VDS= 600V; VGS= 0V;TJ=25℃ TJ=125℃ Diode forward voltage ISD=17A, VGS = 0 V ±0.1 μA 1 100 μA 1.6 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


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