isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Stat...
isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.024Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
100
V
±20
V
32
A
132
A
50
W
175
℃
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 3
UNIT ℃/W
STP30N10F7
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isc N-Channel MOSFET
Transistor
STP30N10F7
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 16A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±20V;VDS= 0
VDS= 100V; VGS= 0 VDS= 100V; VGS= 0; Tj= 125℃
IS= 32A; VGS=0
MIN MAX UNIT
100
V
2.5
4.5
V
0.024
Ω
±100 nA
1 100
μA
1.1
V
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