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STP31N65M5 Dataheets PDF



Part Number STP31N65M5
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet STP31N65M5 DatasheetSTP31N65M5 Datasheet (PDF)

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=22A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 148mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Co.

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