STP36N55M5

isc N-Channel MOSFET Transistor STP36N55M5 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 550 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ 33 A IDM Drain Current-Single Pulsed 132 A PD Total Dissipation 190 W Tj Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.66 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STP36N55M5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1.0mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA 550 V 3.0 5.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=16.5A 80 mΩ IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±25V;VDS= 0V VDS= 550V; VGS= 0V;Tc=25℃ Tc=125℃ ISD= 33A, VGS = 0 V ±100 nA 1 100 μA 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without no...